1 n-channel 30-v (d-s) mosfet features ? t rench fet ? power m o sfet ? 100 % r g and uis te ste d ? compliant to rohs directive 2011/65/eu applications ? o r-in g ? server ?dc/dc notes: a. based on t c = 2 5 c. b. surfa ce mounted on 1" x 1" fr4 board. c. t = 10 sec. d. maximum under steady state conditions is 90 c /w. e. calculated based on maximum junction tem perature. package limitation current is 90 a. product summ ary v ds (v) r ds(on) ( ? ) i d (a) a, e q g (ty p ) 30 0.0038 at v gs = 10 v 98 82 nc 0.0044 at v gs = 4.5 v 98 to-220ab top v i ew gds n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) pa rameter symbol limit u nit dr ain-source voltage v ds 30 v gate -source v oltage v gs 2 0 contin uous d rain current (t j = 175 c ) t c = 25 c i d 98 a, e a t c = 70 c 98 e t a = 25 c 28.8 b, c t a = 70 c 27 b, c pulsed dra i n current i dm 90 av alanche c urrent pulse l = 0.1 mh i as 36 single pulse av alanche energy e as 64.8 v contin uous sou rce-drain diode current t c = 25 c i s 90 a, e a t a = 25 c 3.13 b, c maxi m um power dissipation t c = 25 c p d 250 a w t c = 70 c 175 t a = 25 c 3.75 b, c t a = 70 c 2.63 b, c oper ating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings p arameter symbol t y p. max. un it maxim um junction-to-ambient b, d t ? 10 sec r thja 32 40 c/w maxim um j unction-to-case steady state r thjc 0. 5 0.6 www.din-tek.jp dt p0403
2 no t e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications (t j = 25 c, unle s s otherwise noted) pa ra mete r sy mbol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = 250 a 30 v v ds t emper ature coefficient ' v ds /t j i d = 250 a 35 mv/c v gs(t h) temper ature coefficient ' v gs(t h) /t j - 7.5 gate-so urce thresho ld voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.5 v gate-s ource leakage i gss v ds = 0 v, v gs = 2 0 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state dr ain current a i d( on) v ds t 5 v, v gs = 10 v 90 a drain-source on-state resistance a r ds(on) v gs = 10 v , i d = 28.8 a 0.002 4 0 .0038 : v gs = 4.5 v, i d = 27 a 0.002 7 0 .0044 forward transconductance a g fs v ds = 15 v , i d = 28 .8 a 160 s dy nam i c b inpu t capacita n ce c iss v ds = 15 v , v gs = 0 v , f = 1 mhz 12065 pf output capacitance c oss 1725 rev erse t ransfer capacitance c rss 970 to tal gate charge q g v ds = 15 v , v gs = 10 v , i d = 28.8 a 171 257 nc v ds = 15 v , v gs = 4.5 v , i d = 28.8 a 81.5 123 gate-s ource charge q gs 34 gate-dr a in charge q gd 29 ga te re sistance r g f = 1 mhz 1.4 2.1 : tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 0.625 : i d # 24 a, v gen = 10 v, r g = 1 : 18 27 ns rise time t r 11 17 turn-off delay time t d(off) 70 105 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v , r l = 0.67 : i d # 22.5 a, v gen = 4.5 v, r g = 1 : 55 83 rise time t r 180 270 t ur n-off delay time t d(off) 55 83 fa l l time t f 12 18 drain- so urce body diode characteristics continuous source-drain diode current i s t c = 25 c 90 a pulse diod e forward current a i sm 90 body diode vo ltage v sd i s = 2 2 a 0.8 1.2 v body diode reverse recovery time t rr i f = 20 a , di/dt = 100 a/s, t j = 25 c 52 78 ns body diode reverse recovery charge q rr 70.2 105 nc re verse recovery fall time t a 27 ns rev erse reco very rise time t b 25 z z z g l q w h n m s ' 7 3
3 typica l c har acteristics (25 c, unless otherwise noted) output char ac teristics transconductance capacitance 0 15 30 45 60 75 90 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 10 v thr u 4 v v ds - drain-to-so u rce v oltage ( v ) ) a ( tnerr u c niard -i d v gs = 2 v v gs = 3 v 0 100 200 300 400 500 600 0 102 03040506070 8 090 ) s( ecnatc u dnocsnart -g s f i d - drain c u rrent (a) t c = - 55 c t c = 25 c t c = 125 c 0 3000 6000 9000 12 000 15 000 0 6 12 1 8 24 30 v ds - drain-to-so u rce v oltage ( v ) )fp( e cnaticapac - c c iss c oss c rss transfer ch aracteristics r ds(o n ) vs. dr a in current gate charge 0.0 0.6 1.2 1. 8 2.4 3.0 012 34 v gs - gate-to-so u rce v oltage ( v ) ) a ( tnerr u c niard -i d t c = 25 c t c = - 55 c t c = 125 c 0.0020 0.0022 0.0024 0.0026 0.002 8 0.0030 0.0032 0 153 045607590 i d - drain c u rrent (a) r ds(on) e ( ) c natsiser-no ? v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0 3 06 0901201501 8 0 ) v ( egatlo v ecr u os-ot-etag - q g - total gate charge (nc) v gs i d = 2 8 . 8 a v ds = 24 v v ds = 15 v www.din-tek.jp dt p0403
4 ty pi cal ch aracteristics (25 c, unless otherwise noted) on-res istan ce vs. junction temperature r ds(o n ) vs. v gs vs. tem p erature 0.6 0. 8 1.0 1.2 1.4 1 . 6 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) v gs = 10 v , i d = 2 8 . 8 a r ) n o(sd istance s er-no - ) dezilamro n ( v gs = 4.5 v , i d = 27 a 0.000 0.001 0.002 0.003 0.004 0.005 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) r ds(on ) - e ( ) c natsiser-no i d = 2 8 . 8 a t a = 125 c t a = 25 c forward diod e voltage vs. temperature threshold voltage 0.001 0.01 0 .1 1 10 100 0 0 .2 0.4 0.6 0. 8 1 ) a ( tnerr u c ecr u os -i s v sd - so u rce-to-drain v oltage ( v ) t j = 25 c t j = 150 c 0. 8 1.2 1.6 2.0 2.4 2. 8 - 50 - 25 0 25 50 75 100 125 150 175 ) v ( ecnaira vv ) ht (sg t j - t emperat u re (c) i d = 250 a safe op eratin g area, junction-to-ambient 0.001 0.01 0 .1 1 10 100 1000 0.1 1 10 100 t a = 25 c single pulse - dr ain current (a) i d dc 10 s 1 s 100 ms 10 ms *limited by r ds (on) v ds - drain-to-source v oltage (v) *v gs minimum v gs at which r ds( on) is specified www.din-tek.jp dt p0403
5 typica l c har acteristics (25 c, unless otherwise noted) *t he po wer dissipation p d is ba sed on t j(max) = 1 7 5 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 i d ) a ( tnerr u c niard - t c - case temperat u re (c) pac kage limited power derating 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 c - case temperat u re (c) ) w ( noitapissid re w op t normalized t h ermal transient impedance, junction-to-case square wa v e pulse duration (sec) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 normaliz ed ef f ective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 single pulse 0.05 0.02 www.din-tek.jp dt p0403
1 to-220ab no te s * m = 1.32 mm to 1.62 mm (dim ension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c millimeters inch es dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x12-0208-rev. n, 08-oct-12 dwg: 5471 package information www.din-tek.jp
1 disclaimer all pro d uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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